In-Situ Process and Simulation of High-Performance Piezoelectric-on-Silicon Substrate for SAW Sensor

This paper studied the manufacturing process of Piezoelectric-on-Silicon (POS) substrate which integrates 128° Y – X Lithium niobate thin film and silicon wafer using Smart-Cut technology. The blistering exfoliation processes He as-implanted LN crystal under different annealing temperatures are observed by in-situ method. Unlike conventional polishing process, stripping mechanism is changed controlling temperature, can improve surface morphology peeling lithium film. We prepared POS with high single-crystal roughness 3.91 nm through Benzocyclobutene bonding. After simulating acoustic wave (SAW) characteristics substrate, results demonstrate that layer not only performs as a bonding but also couple more vibrations into electromechanical coupling coefficient up to 7.59% in Rayleigh mode when h / ? 0.3 BCB 0.1. Therefore, high-performance material, has proved be an efficient method miniaturize integrate SAW sensor.